STL130N8F7, MOSFET N-CH 80V 4 mOhm 24A STripFET VII
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
STripFET Power MOSFETsSTMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low R DS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 44 ns |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 135 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 96 nC |
| Rds On - Drain-Source Resistance: | 3.6 mOhms |
| Rise Time: | 51 ns |
| Series: | STL130N8F7 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel Power MOSFET |
| Typical Turn-Off Delay Time: | 82 ns |
| Typical Turn-On Delay Time: | 26 ns |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Brand | STMicroelectronics |
| Configuration | Dual Dual Drain |
| Factory Pack Quantity | 3000 |
| Id - Continuous Drain Current | 24 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | PowerFLAT-5x6-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 5 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 110 nC |
| Rds On - Drain-Source Resistance | 4.6 mOhms |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 2 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Вес, г | 0.08 |
Техническая документация
Datasheet
pdf, 906 КБ
Документация
pdf, 920 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
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