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STB16N90K5, MOSFET N-channel 900 V, 280 mOhm typ 15 A MDmesh K5 Power MOSFET

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см. техническую документацию

1000 шт., срок 6-9 недель

6 900 ֏

от 10 шт. — 5 600 ֏

от 25 шт. — 5 400 ֏

от 100 шт. — 4 130 ֏

Добавить в корзину 1 шт. на сумму 6 900 ֏

Номенклатурный номер: 8004827777

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDmesh K5 Power MOSFETs
STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	9.8 ns
Id - Continuous Drain Current:	15 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	D2PAK-3
Pd - Power Dissipation:	190 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	29.7 nC
Rds On - Drain-Source Resistance:	330 mOhms
Rise Time:	36 ns
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	46 ns
Typical Turn-On Delay Time:	28.8 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Вес, г	1.38