STB33N60DM2, MOSFET N-channel 600 V, 0.110 Ohm typ 24 A MDmesh DM2 Power MOSFET in D2PAK package
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см. техническую документацию
см. техническую документацию
1975 шт., срок 6-9 недель
5 700 ֏
от 10 шт. —
4 360 ֏
от 25 шт. —
3 990 ֏
от 100 шт. —
3 200 ֏
Добавить в корзину 1 шт.
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Альтернативные предложения2
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 9 ns |
| Id - Continuous Drain Current: | 24 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 43 nC |
| Rds On - Drain-Source Resistance: | 130 mOhms |
| Rise Time: | 8 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 62 ns |
| Typical Turn-On Delay Time: | 17 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | 1 N-Channel |
| Factory Pack Quantity | 1000 |
| Fall Time | 9 ns |
| Id - Continuous Drain Current | 24 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 190 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 43 nC |
| Rds On - Drain-Source Resistance | 130 mOhms |
| Rise Time | 8 ns |
| RoHS | Details |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Typical Turn-Off Delay Time | 62 ns |
| Typical Turn-On Delay Time | 17 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Вес, г | 4 |
Техническая документация
Datasheet
pdf, 540 КБ
Документация
pdf, 554 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
