STD10P6F6, MOSFET P-Ch 60V 0.15Ohm 10A STripFET VI DeepGat

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Номенклатурный номер: 8004827900

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор P-МОП, полевой, -60В, -7,2А, 35Вт, DPAK Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	10 ns
Id - Continuous Drain Current:	10 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	35 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	6.4 nC
Rds On - Drain-Source Resistance:	160 mOhms
Rise Time:	7 ns
Series:	STD10P6F6
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	P-Channel
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	14 ns
Typical Turn-On Delay Time:	64 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	P
Forward Diode Voltage	1.1V
Maximum Continuous Drain Current	10 A
Maximum Drain Source Resistance	160 mΩ
Maximum Drain Source Voltage	60 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	30 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Series	STripFET
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	6.4 nC @ 10 V
Width	7.45mm
Вес, г	0.33