STD16N50M2, MOSFET N-channel 500 V, 0.24 Ohm typ 13 A MDmesh M2 Power MOSFET
![Фото 1/2 STD16N50M2, MOSFET N-channel 500 V, 0.24 Ohm typ 13 A MDmesh M2 Power MOSFET](https://static.chipdip.ru/lib/614/DOC010614879.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/064/DOC006064799.jpg)
2429 шт., срок 6-9 недель
2 090 ֏
от 10 шт. —
1 650 ֏
от 100 шт. —
1 240 ֏
от 500 шт. —
970 ֏
Добавить в корзину 1 шт.
на сумму 2 090 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
MDmesh™ II Power MOSFETsSTMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 10 ns |
Id - Continuous Drain Current: | 13 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | DPAK-3(TO-252-3) |
Pd - Power Dissipation: | 110 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 19.5 nC |
Rds On - Drain-Source Resistance: | 240 mOhms |
Rise Time: | 7.6 ns |
Series: | STD16N50M2 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 32 ns |
Typical Turn-On Delay Time: | 9.6 ns |
Vds - Drain-Source Breakdown Voltage: | 550 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Gull-wing |
Maximum Continuous Drain Current (A) | 13 |
Maximum Drain Source Resistance (mOhm) | 280@10V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Gate Source Voltage (V) | ±25 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 110000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 2 |
Pin Count | 3 |
PPAP | No |
Process Technology | MDmesh M2 |
Product Category | Power MOSFET |
Standard Package Name | TO-252 |
Supplier Package | DPAK |
Tab | Tab |
Typical Fall Time (ns) | 10 |
Typical Gate Charge @ 10V (nC) | 19.5 |
Typical Gate Charge @ Vgs (nC) | 19.5@10V |
Typical Input Capacitance @ Vds (pF) | 710@100V |
Typical Rise Time (ns) | 7.6 |
Typical Turn-Off Delay Time (ns) | 32 |
Typical Turn-On Delay Time (ns) | 9.6 |
Вес, г | 1 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг