STD26NF10, MOSFETs N Ch 100V 0.033 Ohm 25A

STD26NF10, MOSFETs N Ch 100V 0.033 Ohm 25A
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см. техническую документацию
2498 шт., срок 7-9 недель
2 290 ֏
от 10 шт.1 810 ֏
от 100 шт.1 370 ֏
от 250 шт.1 270 ֏
1 шт. на сумму 2 290 ֏
Номенклатурный номер: 8004827949
Бренд: STMicroelectronics

Описание

Unclassified
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Технические параметры

Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: 2500
Fall Time: 15 ns
Id - Continuous Drain Current: 25 A
Manufacturer: STMicroelectronics
Maximum Operating Temperature: +175 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package/Case: DPAK-3(TO-252-3)
Pd - Power Dissipation: 100 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 55 nC
Qualification: AEC-Q101
Rds On - Drain-Source Resistance: 38 mOhms
Rise Time: 60 ns
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 17 ns
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: -20 V, +20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Continuous Drain Current (Id) 40A
Drain Source On Resistance (RDS(on)@Vgs,Id) 30mΩ@10V, 40A
Drain Source Voltage (Vdss) 100V
Gate Threshold Voltage (Vgs(th)@Id) -
Input Capacitance (Ciss@Vds) -
Power Dissipation (Pd) -
Reverse Transfer Capacitance (Crss@Vds) -
Total Gate Charge (Qg@Vgs) -
Type N Channel
Вес, г 0.33

Техническая документация

Datasheet
pdf, 368 КБ
Datasheet STD26NF10
pdf, 385 КБ

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