STD5N52K3, MOSFET N-CH 525 V 4.4 A SuperMESH3

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Номенклатурный номер: 8004827985

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 525В, 2,77А, 70Вт, DPAK

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	2500
Fall Time:	16 ns
Id - Continuous Drain Current:	4.4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	TO-252-3
Pd - Power Dissipation:	70 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	17 nC
Rds On - Drain-Source Resistance:	1.2 Ohms
Rise Time:	11 ns
Series:	STD5N52K3
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29 ns
Typical Turn-On Delay Time:	9 ns
Vds - Drain-Source Breakdown Voltage:	525 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
кол-во в упаковке	2500
Current - Continuous Drain (Id) @ 25В°C	4.4A(Tc)
Drain to Source Voltage (Vdss)	525V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	545pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Digi-ReelВ®
Part Status	Active
Power Dissipation (Max)	70W(Tc)
Rds On (Max) @ Id, Vgs	1.5 Ohm @ 2.2A, 10V
Series	SuperMESH3в(ў
Standard Package	1
Supplier Device Package	DPAK
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	4.5V @ 50ВµA
Вес, г	0.33