STD6N95K5, MOSFETs N-Ch 950V 1 Ohm 9A Zener MDmesh K5
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см. техническую документацию
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5529 шт., срок 6-9 недель
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Описание
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Описание Транзистор N-МОП, полевой, 950В 9A DPAK T Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 9 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | DPAK-3(TO-252-3) |
| Pd - Power Dissipation: | 90 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 13 nC |
| Rds On - Drain-Source Resistance: | 1.25 Ohms |
| Series: | STD6N95K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 950 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 9 |
| Maximum Drain Source Resistance (mOhm) | 1250@10V |
| Maximum Drain Source Voltage (V) | 950 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH 5 |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 21 |
| Typical Gate Charge @ 10V (nC) | 13 |
| Typical Gate Charge @ Vgs (nC) | 13@10V |
| Typical Input Capacitance @ Vds (pF) | 450@100V |
| Typical Rise Time (ns) | 12 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Typical Turn-On Delay Time (ns) | 12 |
| Вес, г | 0.33 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг
