STD7NK40ZT4, MOSFETs N-Ch 400 Volt 5.4 A Zener SuperMESH
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
3288 шт., срок 6-9 недель
2 090 ֏
от 10 шт. —
1 600 ֏
от 100 шт. —
1 180 ֏
от 500 шт. —
930 ֏
Добавить в корзину 1 шт.
на сумму 2 090 ֏
Альтернативные предложения3
Описание
Unclassified
Описание Транзистор: N-MOSFET, полевой, 400В, 3,4А, 70Вт, DPAK Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 2500 |
Fall Time: | 12 ns |
Forward Transconductance - Min: | 3.5 S |
Id - Continuous Drain Current: | 5.4 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | TO-252-3 |
Pd - Power Dissipation: | 70 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 26 nC |
Rds On - Drain-Source Resistance: | 1 Ohms |
Rise Time: | 15 ns |
Series: | STD7NK40ZT4 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | SuperMESH |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 30 ns |
Typical Turn-On Delay Time: | 15 ns |
Vds - Drain-Source Breakdown Voltage: | 400 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 5.4 A |
Maximum Drain Source Resistance | 1 Ω |
Maximum Drain Source Voltage | 400 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 70 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DPAK(TO-252) |
Pin Count | 3 |
Series | MDmesh, SuperMESH |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 19 nC @ 10 V |
Width | 6.2mm |
Brand | STMicroelectronics |
Configuration | Single |
Factory Pack Quantity | 2500 |
Fall Time | 12 ns |
Forward Transconductance - Min | 3.5 S |
Height | 2.4 mm |
Id - Continuous Drain Current | 5.4 A |
Length | 6.6 mm |
Manufacturer | STMicroelectronics |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | TO-252-3 |
Packaging | Reel |
Pd - Power Dissipation | 70 W |
Product Category | MOSFET |
Rds On - Drain-Source Resistance | 1 Ohms |
Rise Time | 15 ns |
RoHS | Details |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Type | MOSFET |
Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 15 ns |
Vds - Drain-Source Breakdown Voltage | 400 V |
Vgs - Gate-Source Voltage | 30 V |
Continuous Drain Current (Id) | 5.4A |
Drain Source On Resistance (RDS(on)@Vgs,Id) | 850mΩ@10V, 2.7A |
Drain Source Voltage (Vdss) | 400V |
Gate Threshold Voltage (Vgs(th)@Id) | 4.5V@50uA |
Input Capacitance (Ciss@Vds) | 535pF@25V |
Operating Temperature | -55℃~+150℃@(Tj) |
Power Dissipation (Pd) | 70W |
Reverse Transfer Capacitance (Crss@Vds) | 18pF@25V |
Total Gate Charge (Qg@Vgs) | 26nC@10V |
Вес, г | 0.33 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг