STD8NF25, MOSFET N-Ch 250 V 318 mOhm 8 A STripFET II
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
STripFET II™ Power MOSFETsSTMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low R DS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well established planar technology for high efficiency, low voltage systems.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Id - Continuous Drain Current: | 6 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 72 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 16 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 420 mOhms |
| Series: | STD8NF25 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 250 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 2500 |
| Id - Continuous Drain Current | 6 A |
| Manufacturer | STMicroelectronics |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 72 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 16 nC |
| Rds On - Drain-Source Resistance | 420 mOhms |
| RoHS | Details |
| Series | N-channel STripFET |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage | 250 V |
| Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 337 КБ
Datasheet STD8NF25
pdf, 348 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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