STF13N60DM2, MOSFETs N-channel 600 V, 0.310 Ohm typ 11 A MDmesh DM2 Power MOSFET

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Номенклатурный номер: 8004828365

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Описание Транзистор: N-MOSFET, MDmesh™ DM2, полевой, 600В, 7А, Idm: 44А, 25Вт Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	10.6 ns
Id - Continuous Drain Current:	11 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	310 mOhms
Rise Time:	4.8 ns
Series:	STF13N60DM2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	42.5 ns
Typical Turn-On Delay Time:	12.3 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Case	TO220FP
Drain current	7A
Drain-source voltage	600V
Gate charge	19nC
Gate-source voltage	±25V
Kind of channel	enhanced
Kind of package	tube
Manufacturer	STMicroelectronics
Mounting	THT
On-state resistance	0.365Ω
Polarisation	unipolar
Power dissipation	25W
Pulsed drain current	44A
Technology	MDmesh™ DM2
Type of transistor	N-MOSFET
Вес, г	2