STF7LN80K5, MOSFETs N-channel 800 V, 0.95 Ohm typ 5 A MDmesh K5 Power MOSFET
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Описание
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MDmesh K5 Power MOSFETsSTMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 17.4 ns |
| Id - Continuous Drain Current: | 5 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 25 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 12 nC |
| Rds On - Drain-Source Resistance: | 1.15 Ohms |
| Rise Time: | 6.7 ns |
| Series: | STF7LN80K5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 23.6 ns |
| Typical Turn-On Delay Time: | 9.3 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 5 |
| Maximum Drain Source Resistance (mOhm) | 1150@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 25000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | Mdmesh K5 |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220FP |
| Tab | Tab |
| Typical Fall Time (ns) | 17.4 |
| Typical Gate Charge @ 10V (nC) | 12 |
| Typical Gate Charge @ Vgs (nC) | 12@10V |
| Typical Input Capacitance @ Vds (pF) | 270@100V |
| Typical Rise Time (ns) | 6.7 |
| Typical Turn-Off Delay Time (ns) | 23.6 |
| Typical Turn-On Delay Time (ns) | 9.3 |
| Вес, г | 2 |
Техническая документация
Сроки доставки
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