STGWT40HP65FB, IGBTs Trench gate field-stop 650 V, 40 A high-speed HB series IGBT
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734 шт., срок 7-9 недель
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от 100 шт. —
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Описание
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HB/HB2 Series Insulated-Gate Bipolar TransistorsSTMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.
Технические параметры
Brand: | STMicroelectronics |
Collector- Emitter Voltage VCEO Max: | 650 V |
Collector-Emitter Saturation Voltage: | 1.6 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Continuous Collector Current Ic Max: | 80 A |
Factory Pack Quantity: Factory Pack Quantity: | 300 |
Gate-Emitter Leakage Current: | +/-250 nA |
Manufacturer: | STMicroelectronics |
Maximum Gate Emitter Voltage: | -30 V, 30 V |
Maximum Operating Temperature: | +175 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-3P-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 283 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | STGWT40HP65FB |
Subcategory: | IGBTs |
Technology: | Si |
Base Product Number | STGWT40 -> |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 160A |
ECCN | EAR99 |
Gate Charge | 210nC |
HTSUS | 8541.29.0095 |
IGBT Type | Trench Field Stop |
Input Type | Standard |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-3P-3, SC-65-3 |
Power - Max | 283W |
REACH Status | REACH Unaffected |
Reverse Recovery Time (trr) | 140ns |
RoHS Status | ROHS3 Compliant |
Series | HB -> |
Supplier Device Package | TO-3P |
Switching Energy | 363ВµJ (off) |
Td (on/off) @ 25В°C | -/142ns |
Test Condition | 400V, 40A, 5Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 40A |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Collector Emitter Saturation Voltage | 1.6В |
Collector Emitter Voltage Max | 650В |
Continuous Collector Current | 80А |
Power Dissipation | 283Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | HB |
Максимальная Рабочая Температура | 175°C |
Монтаж транзистора | Through Hole |
Стиль Корпуса Транзистора | TO-3P |
Case | TO3P |
Collector current | 40A |
Collector-emitter voltage | 650V |
Features of semiconductor devices | integrated anti-parallel diode |
Gate-emitter voltage | ±30V |
Kind of package | tube |
Manufacturer | STMicroelectronics |
Mounting | THT |
Pulsed collector current | 160A |
Type of transistor | IGBT |
Вес, г | 5.5 |
Техническая документация
Сроки доставки
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Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
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