STL15N65M5, MOSFET N-CH 650V 0.335Ohm 10A MDmesh M5
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-channel MDmesh V Power MOSFETSTMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 12.5 ns |
Id - Continuous Drain Current: | 10 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | PowerFLAT-5x6-8 |
Pd - Power Dissipation: | 52 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 22 nC |
Rds On - Drain-Source Resistance: | 375 mOhms |
Rise Time: | 8 ns |
Series: | Mdmesh M5 |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage: | 650 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 5 V |
Brand | STMicroelectronics |
Factory Pack Quantity | 3000 |
Fall Time | 12.5 ns |
Id - Continuous Drain Current | 10 A |
Manufacturer | STMicroelectronics |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | PowerFlat-8 |
Packaging | Reel |
Pd - Power Dissipation | 52 W |
Product Category | MOSFET |
Qg - Gate Charge | 22 nC |
Rds On - Drain-Source Resistance | 375 mOhms |
Rise Time | 8 ns |
RoHS | Details |
Series | MDmesh M5 |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Vds - Drain-Source Breakdown Voltage | 650 V |
Vgs th - Gate-Source Threshold Voltage | 5 V |
Вес, г | 0.08 |
Техническая документация
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