STL15N65M5, MOSFET N-CH 650V 0.335Ohm 10A MDmesh M5

STL15N65M5, MOSFET N-CH 650V 0.335Ohm 10A MDmesh M5
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Номенклатурный номер: 8004828736
Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET
N-channel MDmesh V Power MOSFET
STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

Технические параметры

Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 3000
Fall Time: 12.5 ns
Id - Continuous Drain Current: 10 A
Manufacturer: STMicroelectronics
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Package / Case: PowerFLAT-5x6-8
Pd - Power Dissipation: 52 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 22 nC
Rds On - Drain-Source Resistance: 375 mOhms
Rise Time: 8 ns
Series: Mdmesh M5
Subcategory: MOSFETs
Technology: Si
Tradename: MDmesh
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs - Gate-Source Voltage: -25 V, +25 V
Vgs th - Gate-Source Threshold Voltage: 5 V
Brand STMicroelectronics
Factory Pack Quantity 3000
Fall Time 12.5 ns
Id - Continuous Drain Current 10 A
Manufacturer STMicroelectronics
Mounting Style SMD/SMT
Number of Channels 1 Channel
Package / Case PowerFlat-8
Packaging Reel
Pd - Power Dissipation 52 W
Product Category MOSFET
Qg - Gate Charge 22 nC
Rds On - Drain-Source Resistance 375 mOhms
Rise Time 8 ns
RoHS Details
Series MDmesh M5
Technology Si
Transistor Polarity N-Channel
Transistor Type 1 N-Channel
Vds - Drain-Source Breakdown Voltage 650 V
Vgs th - Gate-Source Threshold Voltage 5 V
Вес, г 0.08

Техническая документация

Datasheet
pdf, 1056 КБ
Datasheet
pdf, 923 КБ

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