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STL16N60M2, MOSFET N-channel 600 V, 0.29 Ohm typ 8 A MDmesh M2 Power MOSFET

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2860 шт., срок 6-9 недель

3 120 ֏

от 10 шт. — 2 450 ֏

от 100 шт. — 1 850 ֏

от 250 шт. — 1 720 ֏

Добавить в корзину 1 шт. на сумму 3 120 ֏

Альтернативные предложения1

Номенклатурный номер: 8004828737

Бренд: STMicroelectronics

Описание

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Fall Time:	18.5 ns
Id - Continuous Drain Current:	8 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerFLAT-5x6-8
Pd - Power Dissipation:	52 W
Product Category:	MOSFET
Product Type:	MOSFET
Product:	Power MOSFETs
Qg - Gate Charge:	19 nC
Rds On - Drain-Source Resistance:	355 mOhms
Rise Time:	9.5 ns
Series:	STL16N60M2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Type:	MDmesh M2
Typical Turn-Off Delay Time:	58 ns
Typical Turn-On Delay Time:	10.5 ns
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Вес, г	1