STL190N4F7AG, MOSFET Automotive-grade N-channel 40 V, 1.68 mOhm typ 120 A STripFET F7 Power MOSFET
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2508 шт., срок 6-9 недель
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
STMicroelectronics STripFET VII Power MOSFETs
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 6.5 ns |
| Id - Continuous Drain Current: | 120 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-5x6-8 |
| Pd - Power Dissipation: | 127 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 41 nC |
| Qualification: | AEC-Q101 |
| Rds On - Drain-Source Resistance: | 1.68 mOhms |
| Rise Time: | 6.4 ns |
| Series: | STL190N4F7AG |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 19 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Automotive | Yes |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single Quad Drain Triple Source |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | No Lead |
| Maximum Continuous Drain Current (A) | 120 |
| Maximum Drain Source Resistance (mOhm) | 2@10V |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 127000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 8 |
| Pin Count | 8 |
| PPAP | Unknown |
| Process Technology | STripFET F7 |
| Product Category | Power MOSFET |
| Supplier Package | Power Flat EP |
| Supplier Temperature Grade | Automotive |
| Typical Fall Time (ns) | 6.5 |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Gate Charge @ Vgs (nC) | 41@10V |
| Typical Input Capacitance @ Vds (pF) | 3000@25V |
| Typical Rise Time (ns) | 6.4 |
| Typical Turn-Off Delay Time (ns) | 25 |
| Typical Turn-On Delay Time (ns) | 19 |
| Current - Continuous Drain (Id) @ 25В°C | 120A(Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 25V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | 8-PowerVDFN |
| Power Dissipation (Max) | 127W(Tc) |
| Rds On (Max) @ Id, Vgs | 2 mOhm @ 17.5A, 10V |
| Series | STripFETв(ў |
| Supplier Device Package | PowerFlatв(ў(5x6) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
| Вес, г | 0.08 |
Техническая документация
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Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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