STP140NF75, MOSFETs N-Ch 75 Volt 120 Amp

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1126 шт., срок 6-9 недель

3 690 ֏

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Номенклатурный номер: 8004830090

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Описание Транзистор N-МОП, полевой, 75В, 100А, 310Вт, TO220-3 Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	90 ns
Forward Transconductance - Min:	160 S
Id - Continuous Drain Current:	120 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	310 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	218 nC
Rds On - Drain-Source Resistance:	7.5 mOhms
Rise Time:	140 ns
Series:	STP140NF75
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	130 ns
Typical Turn-On Delay Time:	30 ns
Vds - Drain-Source Breakdown Voltage:	75 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	120 A
Maximum Drain Source Resistance	8 mΩ
Maximum Drain Source Voltage	75 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	310 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	STripFET II
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	160 nC @ 10 V
Width	4.6mm
Вес, г	1.95