STP14NK50Z, MOSFETs N-Ch 500 Volt 14 Amp Zener SuperMESH
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857 шт., срок 6-9 недель
3 340 ֏
от 10 шт. —
3 160 ֏
от 25 шт. —
2 630 ֏
от 100 шт. —
2 180 ֏
Добавить в корзину 1 шт.
на сумму 3 340 ֏
Альтернативные предложения3
Описание
Unclassified
Описание Транзистор: N-MOSFET, полевой, 500В, 7,6А, 150Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 1000 |
Fall Time: | 12 ns |
Forward Transconductance - Min: | 12 S |
Id - Continuous Drain Current: | 14 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Number of Channels: | 1 Channel |
Package / Case: | TO-220-3 |
Packaging: | Tube |
Pd - Power Dissipation: | 150 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 69 nC |
Rds On - Drain-Source Resistance: | 380 mOhms |
Rise Time: | 16 ns |
Series: | STP14NK50Z |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Type: | MOSFET |
Typical Turn-Off Delay Time: | 54 ns |
Typical Turn-On Delay Time: | 24 ns |
Vds - Drain-Source Breakdown Voltage: | 500 V |
Vgs - Gate-Source Voltage: | -30 V, +30 V |
Vgs th - Gate-Source Threshold Voltage: | 3 V |
Base Product Number | STP14 -> |
Current - Continuous Drain (Id) @ 25В°C | 14A (Tc) |
Drain to Source Voltage (Vdss) | 500V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | SuperMESHв„ў -> |
Supplier Device Package | TO-220AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 4.5V @ 100ВµA |
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 14 |
Maximum Drain Source Resistance (mOhm) | 380 10V |
Maximum Drain Source Voltage (V) | 500 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 150000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Number of Elements per Chip | 1 |
Packaging | Tube |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Power MOSFET |
Standard Package Name | TO-220 |
Supplier Package | TO-220AB |
Tab | Tab |
Typical Fall Time (ns) | 12 |
Typical Gate Charge @ 10V (nC) | 69 |
Typical Gate Charge @ Vgs (nC) | 69 10V |
Typical Input Capacitance @ Vds (pF) | 2000 25V |
Typical Rise Time (ns) | 16 |
Typical Turn-Off Delay Time (ns) | 54 |
Typical Turn-On Delay Time (ns) | 24 |
кол-во в упаковке | 50 |
Maximum Continuous Drain Current | 14 A |
Maximum Drain Source Resistance | 380 mΩ |
Maximum Drain Source Voltage | 500 V |
Maximum Gate Source Voltage | -30 V, +30 V |
Maximum Gate Threshold Voltage | 4.5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 150 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Package Type | TO-220 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 69 nC @ 10 V |
Width | 4.6mm |
Вес, г | 2 |
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Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг