STP14NK50Z, MOSFETs N-Ch 500 Volt 14 Amp Zener SuperMESH

Фото 1/8 STP14NK50Z, MOSFETs N-Ch 500 Volt 14 Amp Zener SuperMESH
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Альтернативные предложения3
Номенклатурный номер: 8004830094
Бренд: STMicroelectronics

Описание

Unclassified
Описание Транзистор: N-MOSFET, полевой, 500В, 7,6А, 150Вт, TO220-3 Характеристики
Категория Транзистор
Тип полевой
Вид MOSFET

Технические параметры

Brand: STMicroelectronics
Channel Mode: Enhancement
Configuration: Single
Factory Pack Quantity: Factory Pack Quantity: 1000
Fall Time: 12 ns
Forward Transconductance - Min: 12 S
Id - Continuous Drain Current: 14 A
Manufacturer: STMicroelectronics
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Number of Channels: 1 Channel
Package / Case: TO-220-3
Packaging: Tube
Pd - Power Dissipation: 150 W
Product Category: MOSFET
Product Type: MOSFET
Qg - Gate Charge: 69 nC
Rds On - Drain-Source Resistance: 380 mOhms
Rise Time: 16 ns
Series: STP14NK50Z
Subcategory: MOSFETs
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 54 ns
Typical Turn-On Delay Time: 24 ns
Vds - Drain-Source Breakdown Voltage: 500 V
Vgs - Gate-Source Voltage: -30 V, +30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Base Product Number STP14 ->
Current - Continuous Drain (Id) @ 25В°C 14A (Tc)
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On, Min Rds On) 10V
ECCN EAR99
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 92nC @ 10V
HTSUS 8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Through Hole
Operating Temperature -55В°C ~ 150В°C (TJ)
Other Related Documents http://www.st.com/web/catalog/sense_power/FM100/CL
Package Tube
Package / Case TO-220-3
Power Dissipation (Max) 150W (Tc)
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Series SuperMESHв„ў ->
Supplier Device Package TO-220AB
Technology MOSFET (Metal Oxide)
Vgs (Max) В±30V
Vgs(th) (Max) @ Id 4.5V @ 100ВµA
Automotive No
Channel Mode Enhancement
Channel Type N
Configuration Single
ECCN (US) EAR99
EU RoHS Compliant with Exemption
Lead Shape Through Hole
Maximum Continuous Drain Current (A) 14
Maximum Drain Source Resistance (mOhm) 380 10V
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 150000
Minimum Operating Temperature (°C) -55
Mounting Through Hole
Number of Elements per Chip 1
Packaging Tube
Part Status Active
PCB changed 3
Pin Count 3
PPAP No
Product Category Power MOSFET
Standard Package Name TO-220
Supplier Package TO-220AB
Tab Tab
Typical Fall Time (ns) 12
Typical Gate Charge @ 10V (nC) 69
Typical Gate Charge @ Vgs (nC) 69 10V
Typical Input Capacitance @ Vds (pF) 2000 25V
Typical Rise Time (ns) 16
Typical Turn-Off Delay Time (ns) 54
Typical Turn-On Delay Time (ns) 24
кол-во в упаковке 50
Maximum Continuous Drain Current 14 A
Maximum Drain Source Resistance 380 mΩ
Maximum Drain Source Voltage 500 V
Maximum Gate Source Voltage -30 V, +30 V
Maximum Gate Threshold Voltage 4.5V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 150 W
Minimum Gate Threshold Voltage 3V
Minimum Operating Temperature -55 °C
Package Type TO-220
Transistor Configuration Single
Transistor Material Si
Typical Gate Charge @ Vgs 69 nC @ 10 V
Width 4.6mm
Вес, г 2

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