STP14NK50ZFP, MOSFETs N-Ch, 500V-0.34ohms Zener SuperMESH 14A
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Описание
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Описание Транзистор: N-MOSFET, полевой, 500В, 7,6А, Idm: 48А, 35Вт, TO220FP Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | STP14 -> |
| Current - Continuous Drain (Id) @ 25В°C | 14A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 92nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 35W (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | SuperMESHв„ў -> |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 4.5V @ 100ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 380 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 35 W |
| Minimum Gate Threshold Voltage | 3V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 69 nC @ 10 V |
| Width | 4.6mm |
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 12 S |
| Height | 9.3 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Packaging | Tube |
| Pd - Power Dissipation | 35 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 92 nC |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rise Time | 16 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 24 ns |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4.5 V |
| Вес, г | 0.33 |
Техническая документация
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