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STP18N60DM2, MOSFETs N-channel 600 V, 0.260 Ohm typ 12 A MDmesh DM2 Power MOSFET

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1440 шт., срок 6-9 недель

3 200 ֏

от 10 шт. — 2 540 ֏

от 100 шт. — 1 910 ֏

от 250 шт. — 1 640 ֏

Добавить в корзину 1 шт. на сумму 3 200 ֏

Номенклатурный номер: 8004830129

Бренд: STMicroelectronics

Описание

Unclassified

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q rr, t rr ) and shows 20% lower R DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Fall Time:	32.5 ns
Id - Continuous Drain Current:	12 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package / Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	90 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Rds On - Drain-Source Resistance:	260 mOhms
Rise Time:	8 ns
Series:	STP18N60DM2
Subcategory:	MOSFETs
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	9.5 ns
Typical Turn-On Delay Time:	13.5 ns
Vds - Drain-Source Breakdown Voltage:	600 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Вес, г	1.95