STP18NM80, MOSFETs N-channel 800 V MDMesh
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см. техническую документацию
см. техническую документацию
1000 шт., срок 6-9 недель
8 300 ֏
от 10 шт. —
7 900 ֏
от 25 шт. —
6 300 ֏
от 100 шт. —
5 300 ֏
Добавить в корзину 1 шт.
на сумму 8 300 ֏
Альтернативные предложения1
Описание
Unclassified
Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: | 1000 |
| Fall Time: | 50 ns |
| Id - Continuous Drain Current: | 17 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 70 nC |
| Rds On - Drain-Source Resistance: | 295 mOhms |
| Rise Time: | 28 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 96 ns |
| Typical Turn-On Delay Time: | 18 ns |
| Vds - Drain-Source Breakdown Voltage: | 800 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 17 |
| Maximum Drain Source Resistance (mOhm) | 295@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature (°C) | -65 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| Supplier Temperature Grade | Industrial |
| Tab | Tab |
| Typical Fall Time (ns) | 50 |
| Typical Gate Charge @ 10V (nC) | 70 |
| Typical Gate Charge @ Vgs (nC) | 70@10V |
| Typical Input Capacitance @ Vds (pF) | 2070@50V |
| Typical Rise Time (ns) | 28 |
| Typical Turn-Off Delay Time (ns) | 96 |
| Typical Turn-On Delay Time (ns) | 18 |
| Вес, г | 2 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
