STP21N90K5, MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5

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979 шт., срок 6-9 недель

7 700 ֏

от 10 шт. — 7 300 ֏

от 25 шт. — 5 900 ֏

от 100 шт. — 4 880 ֏

Добавить в корзину 1 шт. на сумму 7 700 ֏

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Номенклатурный номер: 8004830147

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор: N-MOSFET, SuperMESH5™, полевой, 900В, 11,6А, 250Вт Характеристики

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	1000
Id - Continuous Drain Current:	18.5 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	250 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	43 nC
Rds On - Drain-Source Resistance:	299 mOhms
Series:	STP21N90K5
Subcategory:	MOSFETs
Technology:	Si
Tradename:	SuperMESH
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
кол-во в упаковке	50
Current - Continuous Drain (Id) @ 25В°C	18.5A(Tc)
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1645pF @ 100V
Manufacturer	STMicroelectronics
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	250W(Tc)
Rds On (Max) @ Id, Vgs	299 mOhm @ 9A, 10V
Series	SuperMESH5в(ў
Supplier Device Package	TO-220-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±30V
Vgs(th) (Max) @ Id	5V @ 100ВµA
Package Type	TO-220
Вес, г	2