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STW12NK90Z, MOSFETs N-Ch 900 Volt 11 Amp Zener SuperMESH

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1681 шт., срок 6-9 недель

7 700 ֏

от 25 шт. — 5 500 ֏

от 100 шт. — 4 360 ֏

от 250 шт. — 3 720 ֏

Добавить в корзину 1 шт. на сумму 7 700 ֏

Альтернативные предложения1

Номенклатурный номер: 8004830901

Бренд: STMicroelectronics

Описание

Unclassified

Standard Products STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	600
Fall Time:	55 ns
Id - Continuous Drain Current:	11 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	230 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	113 nC
Rds On - Drain-Source Resistance:	880 mOhms
Rise Time:	20 ns
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Type:	MOSFET
Typical Turn-Off Delay Time:	88 ns
Typical Turn-On Delay Time:	31 ns
Vds - Drain-Source Breakdown Voltage:	900 V
Vgs - Gate-Source Voltage:	-30 V, +30 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	600
Fall Time	55 ns
Height	20.15 mm
Id - Continuous Drain Current	11 A
Length	15.75 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-247-3
Packaging	Tube
Pd - Power Dissipation	230 W
Product Category	MOSFET
Qg - Gate Charge	113 nC
Rds On - Drain-Source Resistance	880 mOhms
Rise Time	20 ns
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	88 ns
Typical Turn-On Delay Time	31 ns
Vds - Drain-Source Breakdown Voltage	900 V
Vgs - Gate-Source Voltage	30 V
Width	5.15 mm
Case	TO247
Drain current	11A
Drain-source voltage	900V
Features of semiconductor devices	ESD protected gate
Gate-source voltage	±30V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	880mΩ
Polarisation	unipolar
Power dissipation	230W
Type of transistor	N-MOSFET
Continuous Drain Current (Id)	11A
Drain Source On Resistance (RDS(on)@Vgs,Id)	880mΩ@10V, 5.5A
Drain Source Voltage (Vdss)	900V
Gate Threshold Voltage (Vgs(th)@Id)	4.5V@100uA
Input Capacitance (Ciss@Vds)	3.5nF@25V
Operating Temperature	-55℃~+150℃@(Tj)
Power Dissipation (Pd)	230W
Total Gate Charge (Qg@Vgs)	152nC@10V
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Resistance	880 mΩ
Maximum Drain Source Voltage	900 V
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Gate Threshold Voltage	4.5V
Maximum Power Dissipation	230 W
Minimum Gate Threshold Voltage	3V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-247
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	113 nC @ 10 V
Вес, г	6