STW14NK50Z, MOSFETs N-Ch 500 Volt 14 Amp Zener SuperMESH
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см. техническую документацию
см. техническую документацию
708 шт., срок 6-9 недель
5 500 ֏
от 10 шт. —
4 630 ֏
от 25 шт. —
3 880 ֏
от 100 шт. —
3 110 ֏
Добавить в корзину 1 шт.
на сумму 5 500 ֏
Альтернативные предложения1
Описание
Unclassified
Описание Транзистор N-МОП, полевой, +Z 500В 14A 150Вт 0,38Ом TO247
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 600 |
| Fall Time: | 12 ns |
| Forward Transconductance - Min: | 12 S |
| Id - Continuous Drain Current: | 14 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 150 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 92 nC |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Rise Time: | 16 ns |
| Series: | STW14NK50Z |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 54 ns |
| Typical Turn-On Delay Time: | 24 ns |
| Vds - Drain-Source Breakdown Voltage: | 500 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| Brand | STMicroelectronics |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 600 |
| Fall Time | 12 ns |
| Forward Transconductance - Min | 12 S |
| Height | 20.15 mm |
| Id - Continuous Drain Current | 14 A |
| Length | 15.75 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Pd - Power Dissipation | 150 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 69 nC |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rise Time | 16 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 54 ns |
| Typical Turn-On Delay Time | 24 ns |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 5.15 mm |
| Channel Type | N |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Resistance | 380 mΩ |
| Maximum Drain Source Voltage | 500 V |
| Maximum Gate Source Voltage | -30 V, +30 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 69 nC @ 10 V |
| Вес, г | 6 |
Техническая документация
Сроки доставки
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