AFGHL75T65SQDC, IGBTs IGBT with SiC copack diode IGBT - Hybrid IGBT 650 V
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см. техническую документацию
см. техническую документацию
8 800 ֏
от 25 шт. —
6 700 ֏
от 100 шт. —
5 900 ֏
от 450 шт. —
5 400 ֏
1 шт.
на сумму 8 800 ֏
Описание
Unclassified
AFGHL75T65SQD Field Stop Trench IGBTonsemi AFGHL75T65SQD Field Stop Trench IGBT offers 4th generation high-speed IGBT technology. The AFGHL75T65SQD is AEC-Q101 qualified and provides the optimum performance for both hard and soft-switching topology in automotive applications. Additionally, the onsemi AFGHL75T65SQD Field Stop Trench IGBT features high current capability, fast switching, and tight parameter distribution.
Технические параметры
| Brand: | onsemi |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: Factory Pack Quantity: | 450 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 375 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | SiC |
| Channel Type | N |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 75 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 375 W |
| Number of Transistors | 1 |
| Package Type | TO-247 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Вес, г | 1 |
