STF10NM60ND, MOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWR

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957 шт., срок 6-9 недель

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Номенклатурный номер: 8005442121

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

транз: N-MOSFET 600V 8A <0,6Om

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity:	1000
Id - Continuous Drain Current:	8 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Packaging:	Tube
Pd - Power Dissipation:	25 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	20 nC
Rds On - Drain-Source Resistance:	600 mOhms
Subcategory:	MOSFETs
Technology:	Si
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Vgs - Gate-Source Voltage:	-25 V, +25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	1000
Id - Continuous Drain Current	8 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	25 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	600 mOhms
RoHS	Details
Series	N-channel MDmesh
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Vds - Drain-Source Breakdown Voltage	650 V
Vgs - Gate-Source Voltage	25 V
Вес, г	2