STL45N60DM6, MOSFETs N-channel 600 V, 0.094 Ohm typ 25 A MDmesh DM6 Power MOSFET
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см. техническую документацию
см. техническую документацию
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Описание
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600V MDmesh™ DM6 Super-junction MOSFETsSTMicroelectronics 600V MDmesh™ DM6 Super-junction MOSFETs are optimized for ZVS, full-bridge, and half-bridge topologies. With a breakdown voltage of 600V, the MDmesh DM6 Power MOSFETs combine an optimized capacitance profile and lifetime killing process. The STMicroelectronics 600V MDmesh DM6 Super-junction MOSFETs offer a low gate charge (Q g ), very low recovery charge (Q rr ), low recovery time (t rr ), and an excellent R DS(on) per area.
Технические параметры
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 7.3 ns |
| Id - Continuous Drain Current: | 25 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitive: | Yes |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerFLAT-8x8-5 |
| Packaging: | Reel, Cut Tape |
| Pd - Power Dissipation: | 160 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Rds On - Drain-Source Resistance: | 110 mOhms |
| Rise Time: | 5.3 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 15 ns |
| Vds - Drain-Source Breakdown Voltage: | 600 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.25 V |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.5V |
| Maximum Continuous Drain Current | 25 A |
| Maximum Drain Source Resistance | 110 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | ±25 V |
| Maximum Gate Threshold Voltage | 4.75V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 160 W |
| Minimum Gate Threshold Voltage | 3.25V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerFLAT 8x8 HV |
| Pin Count | 5 |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 44 nC @ 10 V |
| Width | 8.1mm |
| Вес, г | 0.18 |
Техническая документация
Datasheet STL45N60DM6
pdf, 341 КБ
Datasheet STL45N60DM6
pdf, 573 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
| HayPost | 23 августа1 | 1 650 ֏2 |
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