Главная › Электронные компоненты › Транзисторы › Полевые (FETs, MOSFETs) › ST Microelectronics › STN3NF06, MOSFETs N-Ch 60 Volt 4 Amp

STN3NF06, MOSFETs N-Ch 60 Volt 4 Amp

Изображения служат только для ознакомления,
см. техническую документацию

6158 шт., срок 6-9 недель

850 ֏

от 10 шт. — 760 ֏

от 100 шт. — 467 ֏

от 500 шт. — 376 ֏

Добавить в корзину 1 шт. на сумму 850 ֏

Альтернативные предложения3

Номенклатурный номер: 8005442332

Бренд: STMicroelectronics

Описание

Unclassified

Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discretes, and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models, and simulation tools, are available to make adding to a design-in easy.

Технические параметры

Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	4000
Fall Time:	6 ns
Forward Transconductance - Min:	3 S
Id - Continuous Drain Current:	4 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	SOT-223-4
Pd - Power Dissipation:	3.3 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	10 nC
Rds On - Drain-Source Resistance:	100 mOhms
Rise Time:	18 ns
Series:	STN3NF06
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel Power MOSFET
Type:	MOSFET
Typical Turn-Off Delay Time:	17 ns
Typical Turn-On Delay Time:	7 ns
Vds - Drain-Source Breakdown Voltage:	60 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	4 A
Maximum Drain Source Resistance	0.007 Ω
Maximum Drain Source Voltage	60 V
Maximum Gate Threshold Voltage	4V
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-223
Pin Count	3
Series	STN3N
Transistor Material	Si
Automotive	No
Configuration	Single Dual Drain
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	4
Maximum Drain Source Resistance (mOhm)	100@10V
Maximum Drain Source Voltage (V)	60
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	3300
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	3
PPAP	No
Process Technology	STripFET II
Product Category	Power MOSFET
Standard Package Name	SOT
Supplier Package	SOT-223
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	6
Typical Gate Charge @ 10V (nC)	10
Typical Gate Charge @ Vgs (nC)	10@10V
Typical Input Capacitance @ Vds (pF)	315@25V
Typical Rise Time (ns)	18
Typical Turn-Off Delay Time (ns)	17
Typical Turn-On Delay Time (ns)	7
Brand	STMicroelectronics
Factory Pack Quantity	4000
Fall Time	6 ns
Forward Transconductance - Min	3 S
Height	1.8 mm
Id - Continuous Drain Current	4 A
Length	6.5 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Number of Channels	1 Channel
Package / Case	SOT-223-3
Pd - Power Dissipation	3.3 W
Rds On - Drain-Source Resistance	70 mOhms
Rise Time	18 ns
RoHS	Details
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Type	MOSFET
Typical Turn-Off Delay Time	17 ns
Typical Turn-On Delay Time	7 ns
Unit Weight	0.008818 oz
Vds - Drain-Source Breakdown Voltage	60 V
Vgs - Gate-Source Voltage	20 V
Width	3.5 mm
Вес, г	0.25