STP6N95K5, MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5
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Описание
Semiconductors\Discrete Semiconductors\Transistors\MOSFET
Описание Транзистор: N-MOSFET, SuperMESH5™, полевой, 950В, 6А, 90Вт, TO220-3 Характеристики Категория | Транзистор |
Тип | полевой |
Вид | MOSFET |
Технические параметры
Base Product Number | STP6N95 -> |
Current - Continuous Drain (Id) @ 25В°C | 9A (Tc) |
Drain to Source Voltage (Vdss) | 950V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 100V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 150В°C (TJ) |
Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 90W (Tc) |
Rds On (Max) @ Id, Vgs | 1.25Ohm @ 3A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | SuperMESH5в„ў -> |
Supplier Device Package | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±30V |
Vgs(th) (Max) @ Id | 5V @ 100ВµA |
Channel Mode | Enhancement |
Channel Type | N |
Forward Diode Voltage | 1.6V |
Maximum Continuous Drain Current | 9 A |
Maximum Drain Source Resistance | 1.25 Ω |
Maximum Gate Source Voltage | ±30 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 90 W |
Minimum Gate Threshold Voltage | 3V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | TO-220 |
Pin Count | 3 |
Transistor Configuration | Single |
Typical Gate Charge @ Vgs | 13 nC @ 10 V |
Width | 4.6mm |
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant with Exemption |
Lead Shape | Through Hole |
Maximum Continuous Drain Current (A) | 9 |
Maximum Drain Source Resistance (mOhm) | 1250@10V |
Maximum Drain Source Voltage (V) | 950 |
Maximum Gate Source Leakage Current (nA) | 10000 |
Maximum Gate Source Voltage (V) | ±30 |
Maximum Gate Threshold Voltage (V) | 5 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 90000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Through Hole |
Packaging | Tube |
Part Status | Active |
PCB changed | 3 |
PPAP | No |
Process Technology | SuperMESH |
Product Category | Power MOSFET |
Standard Package Name | TO |
Supplier Package | TO-220AB |
Supplier Temperature Grade | Industrial |
Tab | Tab |
Typical Fall Time (ns) | 21 |
Typical Gate Charge @ 10V (nC) | 13 |
Typical Gate Charge @ Vgs (nC) | 13@10V |
Typical Input Capacitance @ Vds (pF) | 450@100V |
Typical Rise Time (ns) | 12 |
Typical Turn-Off Delay Time (ns) | 33 |
Typical Turn-On Delay Time (ns) | 12 |
Вес, г | 0.33 |
Техническая документация
Datasheet
pdf, 527 КБ
Datasheet STP6N95K5
pdf, 500 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 20 августа1 | бесплатно |
HayPost | 23 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг