FGA5065ADF, IGBT Transistors IGBT, 650 V, 50 A Field Stop Trench
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см. техническую документацию
см. техническую документацию
6 200 ֏
от 10 шт. —
4 760 ֏
от 25 шт. —
4 490 ֏
Добавить в корзину 1 шт.
на сумму 6 200 ֏
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 100 A |
| Continuous Collector Current Ic Max: | 50 A |
| Factory Pack Quantity: | 450 |
| Gate-Emitter Leakage Current: | +/-400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-3PN |
| Packaging: | Tube |
| Pd - Power Dissipation: | 268 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 7 |
Техническая документация
Datasheet
pdf, 501 КБ
