FGH40T65SHDF-F155, IGBT Transistors 650V FS Gen3 Trench IGBT
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см. техническую документацию
см. техническую документацию
4 760 ֏
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3 960 ֏
от 25 шт. —
3 370 ֏
от 100 шт. —
2 700 ֏
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
FGAFx0N60 Field Stop IGBTs onsemi FGAFx0N60 650V Field Stop IGBTs use a novel field stop IGBT technology. These IGBTs feature high current capability, low saturation voltage, high input impedance, and fast switching. onsemi FGAFx0N60 IGBTs offer the optimum performance for solar inverters, UPS, welder, and PFC applications that require low conduction and switching losses.
Технические параметры
| Brand: | onsemi/Fairchild |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.45 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 80 A |
| Continuous Collector Current Ic Max: | 80 A |
| Factory Pack Quantity: | 450 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-247-3 |
| Packaging: | Tube |
| Part # Aliases: | FGH40T65SHDF_F155 |
| Pd - Power Dissipation: | 268 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 7 |
Техническая документация
Datasheet
pdf, 497 КБ
