STP20NM50
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см. техническую документацию
см. техническую документацию
925 шт., срок 8-10 недель
7 600 ֏
от 50 шт. —
4 800 ֏
от 100 шт. —
4 110 ֏
от 500 шт. —
3 400 ֏
Добавить в корзину 1 шт.
на сумму 7 600 ֏
Альтернативные предложения2
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
Описание Транзистор: N-MOSFET, полевой, 550В, 20А, 192Вт, TO220-3 Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Base Product Number | STP20 -> |
| Current - Continuous Drain (Id) @ 25В°C | 20A (Tc) |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 1480pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 192W (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | MDmeshв„ў -> |
| Supplier Device Package | TO-220AB |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±30V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 20 |
| Maximum Drain Source Resistance (mOhm) | 250 10V |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 192000 |
| Minimum Operating Temperature (°C) | -65 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | SuperMESH |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 8.5 |
| Typical Gate Charge @ 10V (nC) | 40 |
| Typical Gate Charge @ Vgs (nC) | 40 10V |
| Typical Input Capacitance @ Vds (pF) | 1480 25V |
| Typical Rise Time (ns) | 16 |
| Typical Turn-Off Delay Time (ns) | 9 |
| Typical Turn-On Delay Time (ns) | 24 |
| корпус | TO-220AB |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 1000 |
| Fall Time | 8.5 ns |
| Forward Transconductance - Min | 10 S |
| Height | 9.15 mm |
| Id - Continuous Drain Current | 20 A |
| Length | 10.4 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Mounting Style | Through Hole |
| Number of Channels | 1 Channel |
| Pd - Power Dissipation | 192 W |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Rise Time | 16 ns |
| RoHS | Details |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Type | MOSFET |
| Typical Turn-Off Delay Time | 9 ns |
| Typical Turn-On Delay Time | 24 ns |
| Unit Weight | 0.079014 oz |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Vgs - Gate-Source Voltage | 30 V |
| Width | 4.6 mm |
Техническая документация
Datasheet STP20NM50
pdf, 350 КБ
Документация
pdf, 350 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
| HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
