FGH60T65SQD-F155, IGBT Transistors 650V 60A FS4 TRENCH
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Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors
FGH60T65SQD-F155 IGBTsonsemi FGH60T65SQD-F155 IGBTs use novel field stop IGBT technology. The onsemi FGH60T65SQD-F155 are 4th generation IGBTs that offer optimum performance for solar inverter, UPS, welder, telecom, ESS, and PFC applications. The IGBTs can be used where low conduction and switching losses are essential.
Технические параметры
| Brand: | onsemi |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.6 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 120 A |
| Factory Pack Quantity: Factory Pack Quantity: | 30 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | onsemi |
| Maximum Gate Emitter Voltage: | -20 V, +20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-247-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 333 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
| Channel Type | P |
| Energy Rating | 50mJ |
| Gate Capacitance | 3813pF |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 60 A |
| Maximum Gate Emitter Voltage | ±30V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 333 W |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Transistors | 1 |
| Package Type | TO-247 G03 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Collector-Emitter Voltage (V) | 650 |
| Maximum Continuous Collector Current (A) | 120 |
| Maximum Gate Emitter Leakage Current (uA) | 0.4 |
| Maximum Gate Emitter Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 333 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Packaging | Tube |
| Part Status | Active |
| PCB changed | 3 |
| PPAP | No |
| Standard Package Name | TO |
| Supplier Package | TO-247 |
| Tab | Tab |
| Typical Collector Emitter Saturation Voltage (V) | 1.6 |
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 240A |
| Gate Charge | 79nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Manufacturer | ON Semiconductor |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-247-3 |
| Power - Max | 333W |
| Reverse Recovery Time (trr) | 34.6ns |
| Series | - |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 227ВµJ(on), 100ВµJ(off) |
| Td (on/off) @ 25В°C | 20.8ns/102ns |
| Test Condition | 400V, 15A, 4.7Ohm, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 60A |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Вес, г | 0.1 |
Техническая документация
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