STP28NM50N

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25 шт. с центрального склада, срок 3 недели

5 800 ֏

от 2 шт. — 5 200 ֏

от 5 шт. — 4 760 ֏

от 10 шт. — 4 500 ֏

1 шт. на сумму 5 800 ֏

Альтернативные предложения2

Номенклатурный номер: 8006380963

Электроэлемент

Описание Транзистор: N-MOSFET, MDmesh™ ||, полевой, 550В, 21А, 150Вт Характеристики

Brand	STMicroelectronics
Configuration	Single
Factory Pack Quantity	50
Fall Time	52 ns
Forward Transconductance - Min	1.5 V
Id - Continuous Drain Current	21 A
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Mounting Style	Through Hole
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	90 W
Product Category	MOSFET
Qg - Gate Charge	50 nC
Rds On - Drain-Source Resistance	158 mOhms
Rise Time	19 ns
RoHS	Details
Series	N-channel MDmesh
Transistor Polarity	N-Channel
Typical Turn-Off Delay Time	62 ns
Vds - Drain-Source Breakdown Voltage	500 V
Vgs th - Gate-Source Threshold Voltage	4 V
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	21 A
Maximum Drain Source Resistance	158 mΩ
Maximum Drain Source Voltage	500 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	150 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	50 nC @ 10 V
Width	4.6mm
Вес, г	3.049