STP75N3LLH6
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см. техническую документацию
см. техническую документацию
1962 шт., срок 8-10 недель
2 000 ֏
от 50 шт. —
1 430 ֏
от 100 шт. —
1 090 ֏
от 500 шт. —
870 ֏
Добавить в корзину 1 шт.
на сумму 2 000 ֏
Описание
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single
N-канал 30V 75A (Tc) 60W (Tc) сквозное отверстие TO-220
Технические параметры
| Base Product Number | STP75N -> |
| Current - Continuous Drain (Id) @ 25В°C | 75A (Tc) |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| ECCN | EAR99 |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23.8nC @ 4.5V |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 2030pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Mounting Type | Through Hole |
| Operating Temperature | -55В°C ~ 175В°C (TJ) |
| Package | Tube |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 60W (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 37.5A, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Series | DeepGATEв„ў, STripFETв„ў VI -> |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Through Hole |
| Maximum Continuous Drain Current (A) | 75 |
| Maximum Drain Source Resistance (mOhm) | 5.9 10V |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum Power Dissipation (mW) | 60000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Packaging | Tube |
| Part Status | Obsolete |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-220 |
| Supplier Package | TO-220AB |
| Tab | Tab |
| Typical Fall Time (ns) | 12 |
| Typical Gate Charge @ Vgs (nC) | 17 4.5V |
| Typical Input Capacitance @ Vds (pF) | 1690 25V |
| Typical Rise Time (ns) | 30 |
| Typical Turn-Off Delay Time (ns) | 37 |
| Typical Turn-On Delay Time (ns) | 9.5 |
Техническая документация
Datasheet STP75N3LLH6
pdf, 1110 КБ
Datasheet STP75N3LLH6
pdf, 1120 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
| HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
