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STGW40H65FB

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818 шт., срок 8-10 недель

5 200 ֏

от 30 шт. — 3 470 ֏

от 120 шт. — 2 780 ֏

от 510 шт. — 2 300 ֏

Добавить в корзину 1 шт. на сумму 5 200 ֏

Альтернативные предложения1

Номенклатурный номер: 8006637199

Бренд: STMicroelectronics

Описание

HB/HB2 Series Insulated-Gate Bipolar Transistors
STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Технические параметры

Brand:	STMicroelectronics
Collector- Emitter Voltage VCEO Max:	650 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Single
Continuous Collector Current at 25 C:	80 A
Continuous Collector Current Ic Max:	40 A
Factory Pack Quantity: Factory Pack Quantity:	600
Gate-Emitter Leakage Current:	250 nA
Manufacturer:	STMicroelectronics
Maximum Gate Emitter Voltage:	-20 V, +20 V
Maximum Operating Temperature:	+175 C
Minimum Operating Temperature:	-55 C
Mounting Style:	Through Hole
Package / Case:	TO-247-3
Packaging:	Tube
Pd - Power Dissipation:	283 W
Product Category:	IGBT Transistors
Product Type:	IGBT Transistors
Series:	STGW40H65FB
Subcategory:	IGBTs
Technology:	Si