LET20030C

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43 шт., срок 8-10 недель

92 700 ֏

от 25 шт. — 70 400 ֏

1 шт. на сумму 92 700 ֏

Альтернативные предложения1

Номенклатурный номер: 8006665669

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - RF

RF Mosfet LDMOS 28V 400mA 2GHz 13.9dB 45W M243

Base Product Number	LET20030 ->
Current - Test	400mA
Current Rating (Amps)	9A
ECCN	EAR99
Frequency	2GHz
Gain	13.9dB
HTSUS	8541.29.0095
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Other Related Documents	http://www.st.com/web/catalog/sense_power/FM1987/C
Package	Box
Package / Case	M243
Power - Output	45W
RoHS Status	ROHS3 Compliant
Supplier Device Package	M243
Transistor Type	LDMOS
Voltage - Rated	80V
Voltage - Test	28V
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Obsolete
HTS	8541.29.00.95
Package Length	20.57(Max)
Mounting	Screw
Package Width	6.1(Max)
PCB changed	3
Package Height	4.45(Max)
Configuration	Single
Channel Mode	Enhancement
Channel Type	N
Number of Elements per Chip	1
Mode of Operation	IS-97 CDMA
Process Technology	LDMOS
Maximum Drain Source Voltage (V)	80
Maximum Gate Source Voltage (V)	15
Maximum VSWR	10(Min)
Maximum Continuous Drain Current (A)	9
Typical Input Capacitance @ Vds (pF)	58@28V
Typical Reverse Transfer Capacitance @ Vds (pF)	0.8@28V
Typical Output Capacitance @ Vds (pF)	29@28V
Typical Forward Transconductance (S)	2.5(Min)
Maximum Power Dissipation (mW)	108000
Output Power (W)	45(Typ)
Typical Power Gain (dB)	13.9
Maximum Frequency (MHz)	2000
Typical Drain Efficiency (%)	50
Minimum Operating Temperature (°C)	-65
Maximum Operating Temperature (°C)	200
Packaging	Loose
Automotive	No
Pin Count	3
Supplier Package	Case M-243
Military	No
Вес, кг	1.8