STD5NM60T4

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8072 шт., срок 8-10 недель

3 260 ֏

от 10 шт. — 2 510 ֏

от 100 шт. — 1 860 ֏

от 500 шт. — 1 370 ֏

1 шт. на сумму 3 260 ֏

Альтернативные предложения1

Номенклатурный номер: 8006901836

Trans MOSFET N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R

Channel Mode	Enhancement
Channel Type	N
Forward Diode Voltage	1.5V
Maximum Continuous Drain Current	5 A
Maximum Drain Source Resistance	1 Ω
Maximum Drain Source Voltage	650 V
Maximum Gate Source Voltage	±30 V
Maximum Gate Threshold Voltage	5V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	96 W
Minimum Gate Threshold Voltage	4V
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	IPAK(TO-251)
Pin Count	3
Transistor Configuration	Single
Typical Gate Charge @ Vgs	13 nC @ 10 V
Width	2.4mm
Automotive	No
Configuration	Single
ECCN (US)	EAR99
Lead Shape	Gull-wing
Maximum Continuous Drain Current (A)	5
Maximum Drain Source Resistance (mOhm)	1000@10V
Maximum Drain Source Voltage (V)	600
Maximum Gate Source Voltage (V)	±30
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	96000
Minimum Operating Temperature (°C)	-55
Mounting	Surface Mount
Packaging	Tape and Reel
Part Status	Active
PCB changed	2
PPAP	No
Process Technology	MDmesh
Product Category	Power MOSFET
Standard Package Name	TO-252
Supplier Package	DPAK
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Fall Time (ns)	10
Typical Gate Charge @ 10V (nC)	13
Typical Gate Charge @ Vgs (nC)	13@10V
Typical Input Capacitance @ Vds (pF)	400@25V
Typical Rise Time (ns)	10
Typical Turn-Off Delay Time (ns)	23
Typical Turn-On Delay Time (ns)	14