STD100N10F7, MOSFET N-Ch 100V 0.0068mOhm 80A STripFETVII 120

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Номенклатурный номер: 8007243637

Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Описание Транзистор N-МОП, полевой, 100В 80A 120Вт 0,008Ом TO252 Характеристики

Current - Continuous Drain (Id) @ 25В°C	80A(Tc)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	4369pF @ 50V
Manufacturer	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 175В°C(TJ)
Package / Case	TO-252-3, DPak(2 Leads+Tab), SC-63
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	120W(Tc)
Rds On (Max) @ Id, Vgs	8mOhm @ 40A, 10V
Series	DeepGATEв(ў, STripFETв(ў VII
Supplier Device Package	DPAK
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4.5V @ 250ВµA
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	80 A
Maximum Drain Source Resistance	8 mΩ
Maximum Drain Source Voltage	100 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+175 °C
Maximum Power Dissipation	120 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Number of Elements per Chip	1
Package Type	DPAK(TO-252)
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	61 nC @ 10 V
Width	6.2mm
Вес, г	1