STH240N10F7-6
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см. техническую документацию
8 шт. с центрального склада, срок 2-3 недели
3 870 ֏
от 2 шт. —
3 340 ֏
от 5 шт. —
3 000 ֏
Добавить в корзину 1 шт.
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Альтернативные предложения3
Описание
Электроэлемент
POWER FIELD-EFFECT TRANSISTOR, 180A I(D), 100V, 0.0025OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current - (A) | 180 |
| Maximum Drain Source Resistance - (mOhm) | 2.5@10V |
| Maximum Drain Source Voltage - (V) | 100 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Gate Threshold Voltage - (V) | 4.5 |
| Maximum Power Dissipation - (mW) | 300000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~175 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Process Technology | STripFET |
| Supplier Package | H2PAK |
| Typical Gate Charge @ 10V - (nC) | 160 |
| Typical Gate Charge @ Vgs - (nC) | 160@10V |
| Typical Input Capacitance @ Vds - (pF) | 11550@25V |
| Base Part Number | STH240 |
| Current - Continuous Drain (Id) @ 25В°C | 180A(Tc) |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 160nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11550pF @ 25V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 175В°C(TJ) |
| Package / Case | TO-263-7, DВІPak(6 Leads+Tab) |
| Part Status | Active |
| Power Dissipation (Max) | 300W(Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 60A, 10V |
| Series | STripFETв(ў F7 |
| Supplier Device Package | H2PAK-6 |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4.5V @ 250ВµA |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 112 ns |
| Id - Continuous Drain Current: | 180 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package/Case: | TO-263-7 |
| Pd - Power Dissipation: | 300 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 160 nC |
| Rds On - Drain-Source Resistance: | 2.5 mOhms |
| Rise Time: | 139 ns |
| Series: | STH240N10F7-6 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 110 ns |
| Typical Turn-On Delay Time: | 49 ns |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 3 |
Техническая документация
Datasheet
pdf, 633 КБ
Документация
pdf, 648 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 18 июля1 | бесплатно |
| HayPost | 22 июля1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
