STGF7NB60SL, IGBT Transistors N-CH 7 A - 600V POWERMESH IGBT

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3922 шт., срок 5-8 недель

2 800 ֏

от 10 шт. — 1 340 ֏

от 100 шт. — 1 200 ֏

от 250 шт. — 1 110 ֏

Добавить в корзину 1 шт. на сумму 2 800 ֏

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Номенклатурный номер: 8007351061

Semiconductors\Discrete Semiconductors\Transistors\IGBT Transistors

Описание Транзистор: IGBT; 600В; 7А; 25Вт; TO220FP Характеристики

Channel Type	N
Maximum Collector Emitter Voltage	600 V
Maximum Continuous Collector Current	15 A
Maximum Gate Emitter Voltage	±20V
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Mounting Type	Through Hole
Package Type	TO-220FP
Pin Count	3
Transistor Configuration	Single
Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Collector-Emitter Voltage (V)	600
Maximum Continuous Collector Current (A)	15
Maximum Gate Emitter Leakage Current (uA)	0.1
Maximum Gate Emitter Voltage (V)	±20
Maximum Operating Temperature (°C)	150
Maximum Power Dissipation (mW)	25
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Packaging	Tube
Part Status	Active
PCB changed	3
PPAP	No
Standard Package Name	TO
Supplier Package	TO-220FP
Supplier Temperature Grade	Industrial
Tab	Tab
Typical Collector Emitter Saturation Voltage (V)	1.2