STL3NM60N
![Фото 1/2 STL3NM60N](https://static.chipdip.ru/lib/206/DOC004206764.jpg)
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см. техническую документацию
см. техническую документацию
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8756 шт., срок 8-10 недель
2 180 ֏
от 10 шт. —
1 650 ֏
от 100 шт. —
1 230 ֏
от 500 шт. —
1 030 ֏
Добавить в корзину 1 шт.
на сумму 2 180 ֏
Альтернативные предложения3
Описание
Trans MOSFET N-CH 600V 0.65A 8-Pin Power Flat T/R
Технические параметры
Automotive | No |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single Quad Drain Triple Source |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | No Lead |
Maximum Continuous Drain Current (A) | 0.65 |
Maximum Drain Source Resistance (mOhm) | 1800 10V |
Maximum Drain Source Voltage (V) | 600 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum Gate Source Voltage (V) | ±25 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum IDSS (uA) | 1 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 2000 |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 8 |
Pin Count | 8 |
PPAP | No |
Process Technology | MDmesh |
Product Category | Power MOSFET |
Supplier Package | Power Flat |
Typical Fall Time (ns) | 20 |
Typical Gate Charge @ 10V (nC) | 9.5 |
Typical Gate Charge @ Vgs (nC) | 9.5 10V |
Typical Input Capacitance @ Vds (pF) | 188 50V |
Typical Rise Time (ns) | 6.2 |
Typical Turn-Off Delay Time (ns) | 20.8 |
Typical Turn-On Delay Time (ns) | 8.6 |
Brand | STMicroelectronics |
Factory Pack Quantity | 3000 |
Fall Time | 20 ns |
Id - Continuous Drain Current | 2.2 A |
Manufacturer | STMicroelectronics |
Mounting Style | SMD/SMT |
Number of Channels | 1 Channel |
Package / Case | PowerFLAT-3.3x3.3-HV-8 |
Pd - Power Dissipation | 2 W |
Qg - Gate Charge | 9.5 nC |
Rds On - Drain-Source Resistance | 1.8 Ohms |
Rise Time | 6.2 ns |
RoHS | Details |
Series | N-channel MDmesh |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 20.8 ns |
Typical Turn-On Delay Time | 8.6 ns |
Vds - Drain-Source Breakdown Voltage | 600 V |
Vgs th - Gate-Source Threshold Voltage | 4 V |
Brand: | STMicroelectronics |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 20 ns |
Id - Continuous Drain Current: | 2.2 A |
Manufacturer: | STMicroelectronics |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package/Case: | PowerFLAT-3.3x3.3-HV-8 |
Pd - Power Dissipation: | 2 W |
Product Category: | MOSFET |
Product Type: | MOSFET |
Qg - Gate Charge: | 9.5 nC |
Rds On - Drain-Source Resistance: | 1.8 Ohms |
Rise Time: | 6.2 ns |
Series: | STL3NM60N |
Subcategory: | MOSFETs |
Technology: | Si |
Tradename: | MDmesh |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel Power MOSFET |
Typical Turn-Off Delay Time: | 20.8 ns |
Typical Turn-On Delay Time: | 8.6 ns |
Vds - Drain-Source Breakdown Voltage: | 600 V |
Vgs - Gate-Source Voltage: | -25 V, +25 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V |
Техническая документация
Datasheet
pdf, 838 КБ
Datasheet STL3NM60N
pdf, 860 КБ
Datasheet STL3NM60N
pdf, 844 КБ
Datasheet STL3NM60N
pdf, 844 КБ
Сроки доставки
Доставка в регион Ереван
Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг