STD7NM80
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см. техническую документацию
см. техническую документацию
4293 шт., срок 8-10 недель
5 100 ֏
от 10 шт. —
3 780 ֏
от 100 шт. —
2 760 ֏
от 500 шт. —
2 280 ֏
Добавить в корзину 1 шт.
на сумму 5 100 ֏
Альтернативные предложения1
Описание
Описание Транзистор N-MOSFET, полевой, 800В, 6,5А, 90Вт, DPAK
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 6.5 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Maximum Drain Source Resistance (mOhm) | 1050@10V |
| Maximum Drain Source Voltage (V) | 800 |
| Maximum Gate Source Voltage (V) | ±30 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Maximum Power Dissipation (mW) | 90000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 10 |
| Typical Gate Charge @ 10V (nC) | 18 |
| Typical Gate Charge @ Vgs (nC) | 18@10V |
| Typical Input Capacitance @ Vds (pF) | 620@25V |
| Typical Rise Time (ns) | 8 |
| Typical Turn-Off Delay Time (ns) | 35 |
| Typical Turn-On Delay Time (ns) | 20 |
| Вес брутто | 0.61 |
| Транспортная упаковка: размер/кол-во | 58*46*37/2500 |
| Brand | STMicroelectronics |
| Factory Pack Quantity | 2500 |
| Fall Time | 10 ns |
| Forward Transconductance - Min | 4 S |
| Height | 2.4 mm |
| Id - Continuous Drain Current | 6.5 A |
| Length | 6.6 mm |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-252-3 |
| Pd - Power Dissipation | 90 W |
| Qg - Gate Charge | 18 nC |
| Rds On - Drain-Source Resistance | 1.05 Ohms |
| Rise Time | 8 ns |
| RoHS | Details |
| Series | N-channel MDmesh |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 35 ns |
| Typical Turn-On Delay Time | 20 ns |
| Vds - Drain-Source Breakdown Voltage | 800 V |
| Vgs - Gate-Source Voltage | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Width | 6.2 mm |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 30 августа1 | бесплатно |
| HayPost | 3 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
