STP30NF20

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1 шт. с центрального склада, срок 2-3 недели

2 940 ֏

Добавить в корзину 1 шт. на сумму 2 940 ֏

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Номенклатурный номер: 8007956690

Электроэлемент

Описание Транзистор: N-MOSFET, STripFET™, полевой, 200В, 19А, 125Вт, TO220-3 Характеристики

Brand	STMicroelectronics
Channel Mode	Enhancement
Configuration	Single
Factory Pack Quantity	1000
Fall Time	8.8 ns
Forward Transconductance - Min	20 S
Height	9.15 mm
Id - Continuous Drain Current	30 A
Length	10.4 mm
Manufacturer	STMicroelectronics
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Package / Case	TO-220-3
Packaging	Tube
Pd - Power Dissipation	125 W
Product Category	MOSFET
Rds On - Drain-Source Resistance	75 mOhms
Rise Time	15.7 ns
RoHS	Details
Series	N-channel STripFET
Technology	Si
Transistor Polarity	N-Channel
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	38 ns
Typical Turn-On Delay Time	35 ns
Unit Weight	0.01164 oz
Vds - Drain-Source Breakdown Voltage	200 V
Vgs - Gate-Source Voltage	20 V
Width	4.6 mm
Case	TO220-3
Drain current	19A
Drain-source voltage	200V
Gate-source voltage	±20V
Kind of channel	enhanced
Kind of package	tube
Mounting	THT
On-state resistance	75mΩ
Polarisation	unipolar
Power dissipation	125W
Type of transistor	N-MOSFET
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Resistance	75 mΩ
Maximum Drain Source Voltage	200 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Gate Threshold Voltage	4V
Maximum Power Dissipation	125 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	38 nC @ 10 V
Вес, г	2.7