STL11N3LLH6

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16 шт. с центрального склада, срок 3 недели

3 040 ֏

от 2 шт. — 2 560 ֏

от 5 шт. — 2 240 ֏

от 10 шт. — 2 080 ֏

1 шт. на сумму 3 040 ֏

Альтернативные предложения1

Номенклатурный номер: 8008869030

Электроэлемент

Mosfet, N-Ch, 30V, 11A, Powerflat Rohs Compliant: Yes |Stmicroelectronics STL11N3LLH6

Current - Continuous Drain (Id) @ 25В°C	11A(Tc)
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	1690pF @ 24V
Manufacturer	STMicroelectronics
Mounting Type	Surface Mount
Operating Temperature	-55В°C ~ 150В°C(TJ)
Package / Case	8-PowerVDFN
Packaging	Cut Tape(CT)
Part Status	Active
Power Dissipation (Max)	2W(Ta), 50W(Tc)
Rds On (Max) @ Id, Vgs	7.5 mOhm @ 5.5A, 10V
Series	DeepGATEв(ў, STripFETв(ў VI
Standard Package	1
Supplier Device Package	PowerFlatв(ў(3.3x3.3)
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	1V @ 250ВµA(Min)
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Factory Pack Quantity: Factory Pack Quantity:	3000
Id - Continuous Drain Current:	11 A
Manufacturer:	STMicroelectronics
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Number of Channels:	1 Channel
Package / Case:	PowerFLAT-3.3x3.3-8
Pd - Power Dissipation:	50 W
Product Category:	MOSFET
Product Type:	MOSFET
Qg - Gate Charge:	17 nC
Rds On - Drain-Source Resistance:	6 mOhms
Series:	STL11N3LLH6
Subcategory:	MOSFETs
Technology:	Si
Tradename:	STripFET
Transistor Polarity:	N-Channel
Transistor Type:	1 N-Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Vgs - Gate-Source Voltage:	-20 V, +20 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Вес, г	0.02