STB75NF20, Транзистор N-МОП, полевой, 200В 75A 190Вт 0,034Ом D Pak
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см. техническую документацию
см. техническую документацию
1000 шт., срок 8 недель
6 000 ֏
Кратность заказа 5 шт.
от 25 шт. —
4 400 ֏
от 100 шт. —
3 720 ֏
от 200 шт. —
3 370 ֏
Добавить в корзину 5 шт.
на сумму 30 000 ֏
Альтернативные предложения2
Описание
Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Maximum Continuous Drain Current (A) | 75 |
| Maximum Drain Source Resistance (mOhm) | 34 10V |
| Maximum Drain Source Voltage (V) | 200 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 190000 |
| Minimum Operating Temperature (°C) | -50 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | STripFET |
| Product Category | Power MOSFET |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Tab | Tab |
| Typical Fall Time (ns) | 29 |
| Typical Gate Charge @ 10V (nC) | 84 |
| Typical Gate Charge @ Vgs (nC) | 84 10V |
| Typical Input Capacitance @ Vds (pF) | 3260 25V |
| Typical Rise Time (ns) | 33 |
| Typical Turn-Off Delay Time (ns) | 75 |
| Typical Turn-On Delay Time (ns) | 53 |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 29 ns |
| Forward Transconductance - Min: | 40 S |
| Id - Continuous Drain Current: | 75 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -50 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | D2PAK-3(TO-263-3) |
| Pd - Power Dissipation: | 190 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 84 nC |
| Rds On - Drain-Source Resistance: | 34 mOhms |
| Rise Time: | 33 ns |
| Series: | STB75NF20 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | STripFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 75 ns |
| Typical Turn-On Delay Time: | 53 ns |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Вес, г | 2.41 |
Техническая документация
Datasheet
pdf, 486 КБ
Datasheet STB75NF20
pdf, 494 КБ
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
