FGH40N60SMDF
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см. техническую документацию
см. техническую документацию
6 800 ֏
от 2 шт. —
6 200 ֏
от 5 шт. —
5 700 ֏
от 10 шт. —
5 500 ֏
1 шт.
на сумму 6 800 ֏
Описание
Электроэлемент
IGBT,N CH,FAST,W/DIO,600V,80A,TO247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):600V; Power Dissipation Pd:349W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AB; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:Lead (27-Jun-2018); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +175°C; Power Dissipation Max:349W; Transistor Type:IGBT
Технические параметры
Base Part Number | FGH40N60 |
Current - Collector (Ic) (Max) | 80A |
Current - Collector Pulsed (Icm) | 120A |
Gate Charge | 119nC |
IGBT Type | Field Stop |
Input Type | Standard |
Manufacturer | ON Semiconductor |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C(TJ) |
Package / Case | TO-247-3 |
Packaging | Tube |
Part Status | Active |
Power - Max | 349W |
Reverse Recovery Time (trr) | 90ns |
Series | - |
Supplier Device Package | TO-247-3 |
Switching Energy | 1.3mJ(on), 260ВµJ(off) |
Td (on/off) @ 25В°C | 12ns/92ns |
Test Condition | 400V, 40A, 6Ohm, 15V |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Channel Type | N |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 80 A |
Maximum Gate Emitter Voltage | ±20V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 349 W |
Minimum Operating Temperature | -55 °C |
Package Type | TO-247AB |
Pin Count | 3 |
Transistor Configuration | Single |
Brand: | onsemi/Fairchild |
Collector- Emitter Voltage VCEO Max: | 600 V |
Collector-Emitter Saturation Voltage: | 1.9 V |
Configuration: | Single |
Continuous Collector Current at 25 C: | 80 A |
Factory Pack Quantity: Factory Pack Quantity: | 30 |
Gate-Emitter Leakage Current: | 400 nA |
Manufacturer: | onsemi |
Maximum Gate Emitter Voltage: | -20 V, 20 V |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | Through Hole |
Package / Case: | TO-247 |
Packaging: | Tube |
Pd - Power Dissipation: | 349 W |
Product Category: | IGBT Transistors |
Product Type: | IGBT Transistors |
Series: | FGH40N60SMDF |
Subcategory: | IGBTs |
Technology: | Si |
Вес, г | 5.42 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 402 КБ
Datasheet FGH40N60SMDF
pdf, 334 КБ
Документация
pdf, 455 КБ