STB13N60M2, Транзистор N-MOSFET, полевой, 600В, 7А, 110Вт, D2PAK
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970 шт., срок 8 недель
2 540 ֏
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Альтернативные предложения3
Описание
MDmesh™ II Power MOSFETs
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.
Технические параметры
| Brand | STMicroelectronics |
| Configuration | Single |
| Factory Pack Quantity | 1000 |
| Fall Time | 9.5 ns |
| Id - Continuous Drain Current | 11 A |
| Manufacturer | STMicroelectronics |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | TO-263-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 110 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 17 nC |
| Rds On - Drain-Source Resistance | 380 mOhms |
| Rise Time | 10 ns |
| RoHS | Details |
| Series | MDmesh M2 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 41 ns |
| Typical Turn-On Delay Time | 11 ns |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Vgs - Gate-Source Voltage | 25 V |
| Vgs th - Gate-Source Threshold Voltage | 3 V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 1000 |
| Fall Time: | 9.5 ns |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-263-3 |
| Pd - Power Dissipation: | 110 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 17 nC |
| Rds On - Drain-Source Resistance: | 380 mOhms |
| Rise Time: | 10 ns |
| Series: | STB13N60M2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 41 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V |
| MSL(Уровень чувствительности к влажности) | 1 |
| Диапазон рабочих температур | -55…+150 °С |
| Описание | 600V, 11A N-Channel MOSFET |
| Способ монтажа | поверхностный(SMT) |
| Тип | MOSFET |
| Тип проводимости | N |
| Транспортная упаковка: размер/кол-во | 59*40*51/500 |
| Упаковка | REEL, 2000 шт. |
| Вес, г | 1.57 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 23 августа1 | бесплатно |
| HayPost | 27 августа1 | 1 650 ֏2 |
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2 для посылок массой до 1 кг
