N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

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779 шт., срок 8 недель

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1 шт. на сумму 4 490 ֏

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Номенклатурный номер: 8009802069

Semiconductors\Discrete Semiconductors\MOSFETs

Описание Транзистор: N-MOSFET, MDmesh™ ||, полевой, 600В, 20А, 250Вт Характеристики

Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	29 A
Maximum Drain Source Resistance	105 mΩ
Maximum Drain Source Voltage	600 V
Maximum Gate Source Voltage	-25 V, +25 V
Maximum Gate Threshold Voltage	4V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	210 W
Minimum Gate Threshold Voltage	2V
Mounting Type	Through Hole
Number of Elements per Chip	1
Package Type	TO-220
Pin Count	3
Series	MDmesh
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	84 nC @ 10 V
Width	4.6mm
Current - Continuous Drain (Id) @ 25В°C	29A(Tc)
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2722pF @ 100V
Manufacturer	STMicroelectronics
Operating Temperature	150В°C(TJ)
Package / Case	TO-220-3
Packaging	Tube
Part Status	Active
Power Dissipation (Max)	250W(Tc)
Rds On (Max) @ Id, Vgs	105mOhm @ 14.5A, 10V
Supplier Device Package	TO-220-3
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±25V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Вес, г	5