N-Channel MOSFET, 11 A, 710 V, 3-Pin DPAK STD15N65M5
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см. техническую документацию
см. техническую документацию
1100 шт., срок 8 недель
1 980 ֏
Кратность заказа 5 шт.
5 шт.
на сумму 9 900 ֏
Альтернативные предложения1
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 11 A |
| Maximum Drain Source Resistance | 340 mΩ |
| Maximum Drain Source Voltage | 710 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 85 W |
| Minimum Gate Threshold Voltage | 3V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | DPAK(TO-252) |
| Pin Count | 3 |
| Series | MDmesh M5 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V |
| Width | 6.2mm |
| Automotive | No |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant with Exemption |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 11 |
| Maximum Drain Source Resistance (mOhm) | 340@10V |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Gate Threshold Voltage (V) | 5 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 85000 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 2 |
| PPAP | No |
| Process Technology | MDmesh |
| Product Category | Power MOSFET |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Tab | Tab |
| Typical Gate Charge @ 10V (nC) | 22 |
| Typical Gate Charge @ Vgs (nC) | 22@10V |
| Typical Input Capacitance @ Vds (pF) | 816@100V |
| Brand: | STMicroelectronics |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 11 ns |
| Id - Continuous Drain Current: | 11 A |
| Manufacturer: | STMicroelectronics |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-252-3 |
| Pd - Power Dissipation: | 85 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 340 mOhms |
| REACH - SVHC: | Details |
| Rise Time: | 8 ns |
| Series: | Mdmesh M5 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | MDmesh |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -25 V, +25 V |
| Vgs th - Gate-Source Threshold Voltage: | 4 V |
| Вес, г | 5 |
Техническая документация
Сроки доставки
Доставка в регион Ереван
| Офис «ЧИП и ДИП» | 11 сентября1 | бесплатно |
| HayPost | 15 сентября1 | 1 650 ֏2 |
1 ориентировочно, дата доставки зависит от даты оплаты или подтверждения заказа
2 для посылок массой до 1 кг
